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Product Name : Field Effect Transistor;Type : Silicon N Channel MOS Type;Model No. : IRF1010E Package : TO-220AB;Drain Source Voltage : 60V;Drain Current : 84A Power Dissipation : 200W;Mounting Hole Diameter : 4mm / 0.16" Pin Size : 14 x 2mm / 0.55" x 0.08" ( L* Pitch);Total Size : 29 x 10 x 4.5mm / 0.75" x 0.39" x 0.18" (L*W*H) Weight : 5g;Package : 10 xField Effect Transistor
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